10-F007NIA030SM-P965F39 Datasheet, PDF (5/9 Pages) Vincotech – Reactive power capability

10-F007NIA030SM-P965F39
target datasheet
Parameter
Buck Switch
Static
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
Reverse transfer capacitance
Gate charge
Thermal
Thermal resistance junction to sink
Buck Diode
Static
Forward voltage
Reverse leakage current
Characteristic Values
Symbol
Conditions
VGE [V]
VGS [V]
VCE [V]
VDS [V]
VF [V]
IC [A]
ID [A]
IF [A]
Tj [°C]
Min
Value
Typ
Max
Unit
VGE(th) VGE = VCE
VCEsat
ICES
IGES
rg
Cies
f = 1 MHz
Cres
Qg
0,0003 25
25
15
30
125
0
650
25
20
0
25
0
25
25
15
520
30
25
3,3
4
4,7
V
1,69
2,22
V
1,92
40
µA
120
nA
none
Ω
2100
pF
7,7
70
nC
Rth(j-s)
phase-change
material
λ = 3,4 W/mK
1,67
K/W
25
2,48
2,73
VF
15
125
V
1,73
Ir
600
25
10
µA
Thermal
Thermal resistance junction to sink
Rth(j-s)
phase-change
material
λ = 3,4 W/mK
Boost Sw. Protection Diode
Static
Forward voltage
VF
Reverse leakage current
Ir
25
10
150
600
25
1,65
K/W
1,60
1,95
V
1,56
27
µA
Thermal
Thermal resistance junction to sink
Rth(j-s)
phase-change
material
λ = 3,4 W/mK
2,87
K/W
Copyright Vincotech
5
17 Jun. 2016 / Revision 1