V23990-P765-A-D3-14 Datasheet, PDF (4/24 Pages) Vincotech – 3~rectifier,BRC,Inverter, NTC

V23990-P765-A-PM
Characteristic Values
Parameter
Input Rectifier Diode
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Symbol
Conditions
V_GE [V] or
V_GS [V]
V_r [V] or
V_CE [V] or
V_DS [V]
I_C [A] or
I_F [A] or
I_D [A]
T_j
V_F
V_to
r_t
I_r
R_thJH
R_thJC
Thermal grease
thickness≤50µm
λ = 0,61 W/m·K
100
1500
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Inverter IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
V_GE(th) V_CE=V_GE
0,0016
Tj=25°C
Tj=150°C
V_CE(sat)
15
100
Tj=25°C
Tj=150°C
I_CES
0
600
Tj=25°C
Tj=150°C
I_GES
20
0
Tj=25°C
Tj=150°C
R_gint
t_d(on)
Tj=25°C
Tj=150°C
t_r
Tj=25°C
Tj=150°C
t_{d(off) Rgoff=4 Ω}
±15
t_f
Rgon=4 Ω
300
100
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
E_on
Tj=25°C
Tj=150°C
E_off
Tj=25°C
Tj=150°C
C_ies
Output capacitance
C_oss f=1MHz
0
25
Tj=25°C
Reverse transfer capacitance
C_rss
Gate charge
Q_Gate
±15
480
100
Tj=25°C
Thermal resistance chip to heatsink per chip
R_thJH
Thermal resistance chip to case per chip
Coupled thermal resistance transistor-transistor
R_thJC Thermal grease
thickness≤50µm
R_thJHT-T λ = 0,61 W/m·K
Coupled thermal resistance diode-transistor
R_thJHD-T
Inverter FWD
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
V_F
100
Tj=25°C
Tj=150°C
I_RRM
Tj=25°C
Tj=150°C
t_rr
Tj=25°C
Tj=150°C
Q_rr Rgon=4 Ω
±15
300
100
Tj=25°C
Tj=150°C
di(rec)max
Tj=25°C
/dt
Tj=150°C
Erec
Tj=25°C
Tj=150°C
Thermal resistance chip to heatsink per chip
R_thJH
Thermal resistance chip to case per chip
Coupled thermal resistance diode-diode
R_thJC Thermal grease
thickness≤50µm
R_thJHD-D λ = 0,61 W/m·K
Coupled thermal resistance transistor-diode
R_thJHT-D
Value
Min
Typ
Max
Unit
1,2
1,9
1,16
V
0,91
0,77
V
0,003
0,004
Ω
0,05
1,1
mA
0,54
K/W
0,36
5
5,8
6,5
V
1,48
2,2
1,73
V
0,25
mA
700
nA
none
137
138
16
19
188
217
84
104
0,54
0,93
2,5
3,48
6280
Ω
ns
mWs
400
pF
108
620
nC
0,5
0,33
K/W
0,09
0,14
1,62
2,3
1,63
V
128
152
A
106
127
ns
4,64
9,2
µC
9459
5303
A/µs
1,13
2,25
mWs
0,78
0,52
K/W
0,11
copyright Vincotech
4
Revision: 3