V23990-P760-A-D3-14 Datasheet, PDF (4/24 Pages) Vincotech – Motor Drives Power Generation

V23990-P760-A-PM
Characteristic Values
Parameter
Symbol
Conditions
V_GE [V] or
V_GS [V]
V_r [V] or
V_CE [V] or
V_DS [V]
I_C [A] or
I_F [A] or
I_D [A]
T_j
Input Rectifier Diode
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
V_F
V_to
r_t
I_r
R_thJH
R_thJC
Thermal grease
thickness≤50µm
λ = 0,61 W/m·K
100
100
100
1500
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Inverter IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Coupled thermal resistance transistor-transistor
Coupled thermal resistance diode-transistor
V_GE(th) V_CE=V_GE
V_CE(sat)
15
I_CES
0
I_GES
20
R_gint
t_d(on)
t_r
t_{d(off) Rgoff=4 Ω}
±15
t_f
Rgon=4 Ω
E_on
E_off
C_ies
C_oss f=1MHz
0
C_rss
Q_Gate
±15
R_thJH
R_thJC Thermal grease
thickness≤50µm
R_thJHT-T λ = 0,61 W/m·K
R_thJHD-T
1200
0
600
0,0034
100
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
100
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
25
Tj=25°C
Tj=25°C
Inverter FWD
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
V_F
100
Tj=25°C
Tj=150°C
I_RRM
Tj=25°C
Tj=150°C
t_rr
Tj=25°C
Tj=150°C
Q_rr Rgon=4 Ω
±15
600
100
Tj=25°C
Tj=150°C
di(rec)max
Tj=25°C
/dt
Tj=150°C
Erec
Tj=25°C
Tj=150°C
Thermal resistance chip to heatsink per chip
R_thJH
Thermal resistance chip to case per chip
Coupled thermal resistance diode-diode
R_thJC Thermal grease
thickness≤50µm
R_thJHD-D λ = 0,61 W/m·K
Coupled thermal resistance transistor-diode
R_thJHT-D
Value
Min
Typ
Max
Unit
1,18
1,9
1,16
V
0,88
0,75
V
0,003
0,004
Ω
0,05
1,1
mA
0,62
K/W
0,41
5
5,8
6,5
V
1,9
2,5
2,34
V
0,03
mA
700
nA
2
126
130
17
22
242
316
63
115
4,07
6,64
5,22
8,71
5540
Ω
ns
mWs
410
pF
320
580
nC
0,36
0,24
K/W
0,08
0,08
1,83
2,4
1,86
V
167
191
A
134
293
ns
9,39
19,67
µC
7887
3332
A/µs
3,82
8,55
mWs
0,63
0,41
K/W
0,07
copyright Vincotech
4
Revision: 3