70-W624N3A1K2SC-L400FP Datasheet, PDF (4/28 Pages) Vincotech – 2400V NPC-topology

Parameter
Buck IGBT( T1 ,T4 )
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink
Thermal resistance chip to case
Buck Diode( D5 ,D6 )
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink
Thermal resistance chip to case
70-W624N3A1K2SC-L400FP
datasheet
Characteristic Values
Symbol
Conditions
V _GE [V]
or
V _GS [V]
V _r [V]
or
V _CE [V]
or
V _DS [V]
I _C [A]
or
I _F [A]
or
I _D [A]
T _j [°C]
Value
Unit
Min Typ Max
V _GE(th)
V _CEsat
I _CES
I _GES
R _gint
t _d(on)
t_r
t _d(off)
t_f
E _on
E _off
C _ies
C _oss
C _rss
Q_G
R _th(j-s)
R _th(j-c)
V CE=V GE
Per gate access
R goff=0,3 Ω
R gon=0,3 Ω
f=1MHz
phase-change
material
λ = 3,4 W/mK
15
0
20
-10/+15
0
±15
1200
0
600
25
960
0,0408
25
125
1200
25
125
25
125
25
125
25
125
25
125
25
1200
125
25
125
25
125
25
125
25
960
25
5,2
5,8
6,4
V
1,7
2,37
2,4
V
2,78
0,024
mA
2880
nA
1
113
115
43
45
183
229
38
68
44,08
48,91
49,18
86,78
66480
Ω
ns
mWs
3600
pF
3840
5550
nC
0,038
0,025
K/W
V_F
I_R
I _RRM
t _rr
Q _rr
R gon=0,3 Ω
( di _rf/dt )_max
E _rec
R _th(j-s)
R _th(j-c)
phase-change
material
λ = 3,4 W/mK
1200
-10/+15
600
1200
1200
25
125
25
125
25
125
25
125
25
125
25
125
25
125
2,34
2,38
1075
1355
169
214
73,24
136,71
26252
24254
28,02
61,41
0,06
0,04
2,52
1440
V
µA
A
ns
µC
A/µs
mWs
K/W
copyright Vincotech
4
08 Dec. 2015 / Revision 1