20-1B06IPB006RC01-P953A45 Datasheet, PDF (4/8 Pages) Vincotech – Sense output of DC-current

20-*B06IPB006RC01-P953A45*
Target datasheet
Parameter
Input Rectifier Diode
Forward voltage *
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
Thermal resistance chip to heatsink
* chip data
PFC IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage*
Collector-emitter cut-off
Gate-emitter leakage current
Integrated Gate resistor
Gate resistor
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink
* chip data
PFC Inverse Diode
Diode forward voltage
Thermal resistance chip to heatsink
PFC Diode
Forward voltage *
Reverse leakage current
Thermal resistance chip to heatsink
* chip data
PFC Shunt
R1 value
Symbol
Characteristic Values
Conditions
V_GE [V] or
V_GS [V]
V_r [V] or
V_CE [V] or
V_DS [V]
I_C [A] or
I_F [A] or
I_D [A]
T_j
Value
Min
Typ
Max
Unit
V_F
V_to
r_t
I_r
R_thJH
Phase-Change
Material
λ=3,4W/mK
12
12
12
1500
Tj=25°C
0,8
1,15
1,4
Tj=125°C
1,10
V
Tj=25°C
0,90
Tj=125°C
0,79
V
Tj=25°C
Tj=125°C
20
26
mΩ
Tj=25°C
Tj=125°C
0,7
mA
3,54
K/W
V_GE(th) V_GE=V_CE
0,0004
Tj=25°C
Tj=150°C
3,3
4
4,7
V
V_CE(sat)
15
15
Tj=25°C
Tj=150°C
1,6
2,2
V
I_CES
0
650
Tj=25°C
Tj=150°C
0,04
mA
I_GES
20
0
Tj=25°C
Tj=150°C
120
nA
R_gint
none
Ω
R_Gate
10
Ω
C_ies
9300
C_oss f=1MHz
0
25
Tj=25°C
24
pF
C_rss
4
Q_Gate
±15
520
15
Tj=25°C
38
nC
R_thJH
Phase-Change
Material
λ=3,4W/mK
3,18
K/W
V_F
R_thJH
Phase-Change
Material
λ=3,4W/mK
6
Tj=25°C
1,23
1,55
1,87
Tj=125°C
V
3,70
K/W
V_F
I_rm
R_thJH
Phase-Change
Material
λ=3,4W/mK
15
650
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,35
1,77
V
0,94
µA
3,27
K/W
R
69
mΩ
copyright Vincotech
4
19 Nov. 2014 / Revision 2