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| 10-PY07N3A015SM-M892F08Y Datasheet, PDF (4/28 Pages) Vincotech – Neutral-point-Clamped inverter | |||
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10-PY07N3A015SM-M892F08Y
datasheet
Parameter
Symbol
Characteristic Values
Conditions
V GE [V] or
V GS [V]
V r [V] or I C [A] or
V CE [V] or I F [A] or
V DS [V]
I D [A]
Tj
Value
Unit
Min
Typ
Max
Buck IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss
Turn-off energy loss
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink
V GE(th)
V CEsat
I CES
I GES
R gint
t d(on)
tr
t d(off)
tf
E on
E off
C ies
C oss
C rss
QG
R th(j-s)
VCE=VGE
Rgoff=32 â¦
Rgon=32 â¦
f=1MHz
Phase-Change
Material
Ê=3,4W/mK
15
0
20
±15
0
15
650
0
350
25
520
0,0004
Tj=25°C
Tj=125°C
3,3
4
4,7
V
15
Tj=25°C
Tj=125°C
1,64
1,77
2,22
V
Tj=25°C
Tj=125°C
0,04
mA
Tj=25°C
Tj=125°C
200
nA
none
â¦
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
15
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
73
72
8
9
72
86
10
11
0,199
0,277
0,072
0,127
ns
mWs
930
Tj=25°C
240
pF
4
15
Tj=25°C
38
nC
2,20
K/W
Buck FWD
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink
VF
15
Ir
600
I RRM
t rr
Q rr
Rgon=32 â¦
±15
350
15
( di rf/dt )max
E rec
R th(j-s)
Phase-Change
Material
Ê=3,4W/mK
Tj=25°C
Tj=125°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
2,47
2,6
1,73
V
100
µA
17
23
22
36
0,225
0,523
1736
1606
0,024
0,060
A
ns
µC
A/µs
mWs
1,65
K/W
copyright Vincotech
4
09 Oct. 2014 / Revision 2
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