10-FZ06NRA084FP02-P969F68 Datasheet, PDF (4/7 Pages) Vincotech – Parallel switch for high speed and efficiency

10-FZ06NRA084FP02-P969F68
10-PZ06NRA084FP02-P969F68Y
target datasheet
Characteristic Values
Parameter
Buck IGBT *
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
* see dynamic characteristic at Buck MosFET
**additional value stands for built-in capacitor
Buck Diode
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
Symbol
Conditions
V_GE [V] or
V_GS [V]
V_r [V] or
V_CE [V] or
V_DS [V]
I_C [A] or
I_F [A] or
I_D [A]
T_j
V_GE(th) V_CE=V_GE
V_CE(sat)
I_CES
I_GES
R_gint
0,00025
Tj=25°C
Tj=150°C
15
75
Tj=25°C
Tj=150°C
0
600
Tj=25°C
Tj=150°C
20
0
Tj=25°C
Tj=150°C
C_ies
C_oss f=1MHz
0
30
Tj=25°C
C_rss
Q_Gate
±15
400
75
Tj=25°C
R_thJH
Thermal grease
thickness≤50um
λ = 1 W/mK
V_F
24
I_RRM
t_rr
Q_rr diF/dt=tbd A/us ±15
300
75
di(rec)max
/dt
Erec
R_thJH
Thermal grease
thickness≤50um
λ = 1 W/mK
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Buck MOSFET
Static drain to source ON resistance
Gate threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Turn On Delay Time
Rise Time
Turn off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Total gate charge
R_ds(on)
V_(GS)th V_DS=V_GS
I_gss
I_dss
t_d(ON)
t_r
t_d(OFF)
t_f
Rgon=X Ω
Rgoff=X Ω
E_on
E_off
Q_g
10
18
Tj=25°C
Tj=125°C
0,0012
Tj=25°C
Tj=125°C
20
0
Tj=25°C
Tj=125°C
0
600
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
±15
300
75
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Gate to source charge
Q_gs
10
480
18
Tj=25°C
Gate to drain charge
Q_gd
Input capacitance
Output capacitance
C_iss
C_oss
f=1MHz
0
25
Tj=25°C
Thermal resistance chip to heatsink per chip
** see schematic of the Gate-complex at characteristic figures
R_thJH
Thermal grease
thickness≤50um
λ = 1 W/mK
Value
Min
Typ
Max
Unit
3,5
4,5
6
V
1,9
2,5
2,1
V
0,25
mA
400
nA
None
Ω
4000
nF
400
pF
115
94
nC
0,85
K/W
1,50
1,7
1,82
V
tbd
A
tbd
ns
tbd
µC
tbd
A/µs
tbd
mWs
1,91
K/W
90
mΩ
2,4
3
3,5
V
100
nA
5000
uA
tbd.
tbd.
tbd.
tbd.
tbd.
ns
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
mWs
tbd.
119
14
nC
61
2660
pF
154
1,29
K/W
copyright Vincotech
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