10-FZ06NIA030SA-P924F33 Datasheet, PDF (4/24 Pages) Vincotech – Neutral-point-Clamped inverter

10-FZ06NIA030SA-P924F33
preliminary datasheet
Parameter
Boost IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Buck and Boost Inverse FWD
Diode forward voltage
Thermal resistance chip to heatsink per chip
Thermistor
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
B-value
Vincotech NTC Reference
Symbol
Characteristic Values
Conditions
V_GE [V] or
V_GS [V]
V_r [V] or
V_CE [V] or
V_DS [V]
I_C [A] or
I_F [A] or
I_D [A]
T_j
Value
Min
Typ
Max
Unit
V_GE(th) V_CE=V_GE
V_CE(sat)
I_CES
I_GES
0,00043
Tj=25°C
Tj=125°C
5
5,8
6,5
V
15
30
Tj=25°C
Tj=125°C
1
1,54
1,95
1,73
V
0
600
Tj=25°C
Tj=125°C
30
μA
20
0
Tj=25°C
Tj=125°C
350
nA
R_gint
none
ȍ
t_d(on)
t_r
t_d(off)
t_f
Rgoff=16 ȍ
Rgon=16 ȍ
±15
350
30
E_on
E_off
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
102
102
15
18
158
ns
177
88
105
0,45
0,59
0,81
mWs
1,04
C_ies
1630
C_oss f=1MHz
0
25
Tj=25°C
108
pF
C_rss
50
Q_Gate
±15
480
30
Tj=25°C
167
nC
R_thJH
Thermal grease
thickness”50um
Ȝ = 1 W/mK
1,69
K/W
V_F
R_thJH
Thermal grease
thickness”50um
Ȝ = 1 W/mK
30
Tj=25°C
Tj=125°C
1
1,75
2,05
1,73
V
2,15
K/W
R
ǻR/R R100=1486 ȍ
P
B_(25/50) Tol. ±3%
B_(25/100) Tol. ±3%
T=25°C
T=100°C
T=25°C
T=25°C
T=25°C
T=25°C
T=25°C
22000
ȍ
-5
5
%
200
mW
2
mW/K
3950
K
3996
K
B
copyright E\Vincotech
4
Revision: 1