10-FY12B2A040MR02-L387L63 Datasheet, PDF (4/7 Pages) Vincotech – High frequency SiC MOSFET

10-FY12B2A040MR02-L387L63
target datasheet
Characteristic Values
Parameter
Rectifier Diode
Static
Forward voltage
Reverse leakage current
Symbol
VF
Ir
Conditions
Value
VGE [V] VCE [V]
VGS [V] VDS [V]
IC [A]
ID [A]
Tj [°C]
Min
Typ
Max
Unit
25
50
125
25
1600
150
1,22
1,8
V
1,48
50
µA
1100
Thermal
Thermal resistance junction to sink
DC Link Capacitance
Capacitance
Tolerance
Climatic category
Thermistor
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
B-value
Vincotech NTC Reference
Rth(j-s)
phase-change
material
λ = 3,4 W/mK
C
R
ΔR/R R100 = 1484 Ω
P
B(25/50) Tol. ±1 %
B(25/100) Tol. ±1 %
0,82
K/W
78
nF
-10
+10
%
55/125/56
25
22
kΩ
100
-5
5
%
25
5
mW
25
1,5
mW/K
25
3962
K
25
4000
K
I
Copyright Vincotech
4
25 Apr. 2016 / Revision 1