10-FY07NIA100S503-M515F58 Datasheet, PDF (4/7 Pages) Vincotech – NPC inverter topology

10-FY07NIA100S503-M515F58
target datasheet
Characteristic Values
Parameter
Boost Switch
Static
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
Reverse transfer capacitance
Gate charge
Symbol
Conditions
VGE [V]
VGS [V]
VCE [V]
VDS [V]
VF [V]
IC [A]
ID [A]
IF [A]
Tj [°C]
Min
Value
Typ
Max
Unit
VGE(th) VGE = VCE
VCEsat
ICES
IGES
rg
Cies
f = 1 MHz
Cres
Qg
0,002 25
25
15
150
150
0
650
25
20
0
25
0
25
25
15
520
75
25
4,2
5
5,8
V
1,10
1,45
V
1,09
80
µA
200
nA
none
Ω
23250
pF
60
872
nC
Thermal
Thermal resistance junction to sink
Rth(j-s)
phase-change
material
λ = 3,4 W/mK
Boost Diode/Boost Inverse Diode
Static
Forward voltage
VF
Reverse leakage current
Ir
25
100
150
650
25
0,58
K/W
1,77
1,82
V
1,57
54
µA
Thermal
Thermal resistance junction to sink
Thermistor
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
B-value
Vincotech NTC Reference
Rth(j-s)
phase-change
material
λ = 3,4 W/mK
R
ΔR/R R100 = 1484 Ω
P
B(25/50) Tol. ±1 %
B(25/100) Tol. ±1 %
0,8
K/W
25
22
kΩ
100
-5
5
%
25
5
mW
25
1,5
mW/K
25
3962
K
25
4000
K
I
Copyright Vincotech
4
13 Sep. 2016 / Revision 1