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V23990-P868-F49-PM Datasheet, PDF (3/15 Pages) Vincotech – 2 clip housing in 12mm and 17mm height
Parameter
Inverter Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Inverter Diode
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
Thermistor
Rated resistance
Deviation of R100
Power dissipation
B-value
Symbol
Characteristic Values
Conditions
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
IC [A] or
IF [A] or
ID [A]
Tj
V23990-P868-F49/F48-PM
preliminary datasheet
Value
Min
Typ
Max
Unit
VGE(th) VCE=VGE
VCE(sat)
15
ICES
0
IGES
20
Rgint
td(on)
tr
td(off)
tf
Rgon=32ȍ
Rgoff=32ȍ
±15
Eon
Eoff
Cies
Coss f=1MHz
0
Crss
QGate
15
RthJH
Thermal grease
thickness”50um
Ȝ = 0,61 W/mK
1200
0
600
25
0,0005
15
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
15
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
960
15
Tj=25°C
5
5,8
6,5
V
1,84
2,3
V
2,23
5
µA
200
nA
none
86
84
17,8
23,6
201
264
81
130
0,95
1,40
0,83
1,37
900
ȍ
ns
mWs
80
pF
55
93
nC
1,47
K/W
VF
15
IRRM
trr
Qrr Rgon=32ȍ
±15
600
15
di(rec)max
/dt
Erec
RthJH
Thermal grease
thickness”50um
Ȝ = 0,61 W/mK
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=150°C
1,84
2,4
V
1,77
14,8
Α
16,2
289
447
ns
1,54
2,68
μC
92
59
A/μs
1,08
mWs
2,13
K/W
R25 Tol. ±5%
ΔR/R R100=1486ȍ
P
B(25/100) Tol. ±3%
Tj=25°C
20,9
22
23,1
kȍ
Tj=100°C
2,9
%/K
Tj=25°C
210
mW
Tj=25°C
4000
K
Copyright by Vincotech
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Revision: 1