V23990-P865-F49-PM Datasheet, PDF (3/15 Pages) Vincotech – 2 clip housing in 12mm and 17mm height

Parameter
Inverter Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Inverter Diode
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
Thermistor
Rated resistance
Deviation of R100
Power dissipation
B-value
Symbol
Characteristic Values
Conditions
V_GE [V] or
V_GS [V]
V_r [V] or
V_CE [V] or
V_DS [V]
I_C [A] or
I_F [A] or
I_D [A]
T_j
V23990-P865-F49/F48-PM
preliminary datasheet
Value
Min
Typ
Max
Unit
V_GE(th) VCE=VGE
V_CE(sat)
15
I_CES
0
I_GES
20
0,0008
Tj=25°C
Tj=150°C
5
5,8
6,5
V
50
Tj=25°C
Tj=150°C
1,51
2,1
1,75
V
600
Tj=25°C
Tj=150°C
350
µA
0
Tj=25°C
Tj=150°C
650
nA
R_gint
none
ȍ
t_d(on)
t_r
t_d(off)
t_f
Rgon=8ȍ
Rgoff=8ȍ
±15
300
50
E_on
E_off
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
95
100
14
18
161
184
109
131
0,68
1,02
1,30
1,76
ns
mWs
C_ies
3140
C_oss f=1MHz
0
25
Tj=25°C
200
pF
C_rss
93
Q_Gate
±15
300
50
R_thJH
Thermal grease
thickness”50um
Ȝ = 0,61 W/mK
Tj=25°C
310
nC
1,25
K/W
V_F
50
I_RRM
t_rr
Q_rr Rgon=8ȍ
±15
300
50
di(rec)max
/dt
E_rec
R_thJH
Thermal grease
thickness”50um
Ȝ = 0,61 W/mK
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=150°C
1,6
2,2
1,55
V
51,6
62,4
Α
130
172
ns
2,29
4,37
μC
3909
2375
A/μs
0,92
mWs
1,67
K/W
R₂₅ Tol. ±5%
ΔR/R R100=1486ȍ
P
B_(25/100) Tol. ±3%
Tj=25°C
20,9
22
23,1
kȍ
Tj=100°C
2,9
%/K
Tj=25°C
210
mW
Tj=25°C
4000
K
Copyright by Vincotech
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