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V23990-P823-F10-P2-14 Datasheet, PDF (3/16 Pages) Vincotech – Compact flow1 housing
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Parameter
Inverter Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Inverter Diode
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
Thermistor
Rated resistance
Deviation of R100
Power dissipation given Epcos-Typ
B-value
Symbol
Characteristic Values
Conditions
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
IC [A] or
IF [A] or
ID [A]
Tj
V23990-P823-F10-PM
preliminary datasheet
Value
Min
Typ
Max
Unit
VGE(th) VCE=VGE
VCE(sat)
15
ICES
0
IGES
20
0,0008
Tj=25°C
Tj=150°C
5
5,8
6,5
V
50
Tj=25°C
1,1
1,56
2,1
Tj=150°C
1,79
V
600
Tj=25°C
Tj=150°C
0,35
mA
0
Tj=25°C
Tj=150°C
650
nA
Rgint
none
Ω
td(on)
tr
td(off)
tf
Rgoff=8 Ω
Rgon=8 Ω
±15
300
50
Eon
Eoff
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
106
98
19
16
ns
150
173
89
115
0,50
0,75
1,18
mWs
1,63
Cies
3140
Coss f=1MHz
0
25
Tj=25°C
200
pF
Crss
93
QGate Vcc=480
±15
50
Tj=25°C
310
nC
RthJH
Thermal grease
thickness≤50um
λ = 1 W/mK
1,24
K/W
VF
50
IRRM
trr
Qrr Rgon=8 Ω
±15
300
50
di(rec)max
/dt
Erec
RthJH
Thermal grease
thickness≤50um
λ = 1 W/mK
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,2
1,63
2,1
V
1,60
28
A
79
144
ns
147
1,91
4,71
nC
1357
4135
A/μs
0,55
mWs
1,09
1,65
K/W
R25
DR/R
Tol. ±5%
R100=435Ω
P
B(25/100) Tol. ±3%
Tj=25°C
4,46
4,7
4,94
kΩ
Tc=100°C
2,6
%/K
Tj=25°C
210
mW
Tj=25°C
3530
K
copyright by Vincotech
3
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