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| V23990-P820-F-P2-14 Datasheet, PDF (3/16 Pages) Vincotech – Compact flow1 housing | |||
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Parameter
Inverter Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Inverter Diode
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
Thermistor
Rated resistance
Deviation of R100
Power dissipation given Epcos-Typ
B-value
Symbol
Characteristic Values
Conditions
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
IC [A] or
IF [A] or
ID [A]
Tj
V23990-P820-F-PM
preliminary datasheet
Value
Min
Typ
Max
Unit
VGE(th) VCE=VGE
VCE(sat)
15
ICES
0
IGES
20
Rgint
td(on)
tr
td(off)
tf
Rgoff=4 â¦
Rgon=4 â¦
±15
Eon
Eoff
Cies
Coss f=1MHz
0
Crss
QGate Vcc=960V
±15
RthJH
Thermal foil
thickness=76um
Kunze foil KU-ALF5
1200
0
600
25
0,0024
75
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
75
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
75
Tj=25°C
5
5,8
6,5
V
1,6
1,92
2,4
2,39
V
0,025
mA
650
nA
10
165
183
27
35
271
351
83
115
6,16
9,44
4,02
6,48
4400
â¦
ns
mWs
290
pF
235
375
nC
0,45
K/W
VF
75
IRRM
trr
Qrr Rgon=4 â¦
±15
600
75
di(rec)max
/dt
Erec
RthJH
Thermal foil
thickness=76um
Kunze foil KU-ALF5
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,4
1,75
2,5
V
1,71
69
A
76
316
ns
499
7,26
14,26
μC
2373
371
A/μs
2,61
mWs
5,34
0,58
K/W
R25
DR/R
Tol. ±5%
R100=435â¦
P
B(25/100) Tol. ±3%
Tj=25°C
4,46
4,7
4,94
kâ¦
Tc=100°C
2,6
%/K
Tj=25°C
210
mW
Tj=25°C
3530
K
copyright by Vincotech
3
Revision: 2
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