V23990-P718-G-PM Datasheet, PDF (3/17 Pages) Vincotech – Compatible with flow 90PACK 1

V23990-P718-*-PM
Parameter
Input Rectifier Diode
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
Thermal resistance chip to heatsink per chip
Input Rectifier Thyristor
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
Gate controlled delay time
Gate controlled rise time
Critical rate of rise of off-state voltage
Critical rate of rise of on-state current
Circuit commutated turn-off time
Holding current
Latching current
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Gate non-trigger current
Thermal resistance chip to heatsink per chip
Brake IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Symbol
Characteristic Values
Conditions
V_GE [V] or
V_GS [V]
V_r [V] or
V_CE [V] or
V_DS [V]
I_C [A] or
I_F [A] or
I_D [A]
T_j
Value
Min
Typ
Max
Unit
V_F
V_to
r_t
I_r
R_thJH
Thermal grease
thickness≤50um
λ = 0,61 W/mK
59
59
59
1500
Tj=25°C
0,8
1,23
1,5
Tj=125°C
1,21
V
Tj=25°C
0,92
Tj=125°C
0,81
V
Tj=25°C
Tj=125°C
5,0
6,8
mΩ
Tj=25°C
Tj=125°C
0,05
mA
1,15
K/W
V_F
V_to
r_t
I_r
t_GD
I_G=0,5A
V_D=1/2 V_DRM
t_GR
(dv/dt)cr
(di/dt)cr
V_D=2/3 V_DRM
linear voltage rise
V_D=2/3 V_DRM
I_G=0,45A; f=50Hz
t_q
V_D=2/3 V_DRM
I_H
I_L
I_G=0,45A
tp=10 µs
V_GT
I_GT
V_GD V_D=2/3 V_DRM
I_GD V_D=2/3 V_DRM
R_thJH
Thermal grease
thickness≤50um
λ = 0,61 W/mK
V_D=6 V
1200
tp=200 µs
tp=200 µs 100
V_D=6 V
V_D=6 V
V_D=6 V
0,048
Tj=25°C
Tj=125°C
1
35
Tj=25°C
Tj=125°C
35
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=150°C
42
Tj=150°C
42
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=150°C
Tj=150°C
1,36
1,9
1,38
V
1,00
0,89
V
0,01
0,01
mΩ
0,05
5
mA
2
µs
tbd.
µs
1000
V/µs
500
A/µs
150
µs
75
mA
125
mA
1,5
V
50
mA
0,2
V
5
mA
1,16
K/W
V_GE(th) V_CE=V_GE
V_CE(sat)
15
I_CES
0
I_GES
20
R_gint
t_d(on)
t_r
t_{d(off) Rgon=32 Ω}
±15
t_f
Rgoff=16 Ω
E_on
E_off
C_ies
C_oss f=1MHz
0
C_rss
Q_Gate
R_thJH
Thermal grease
thickness≤50um
λ = 0,61 W/mK
1200
0
600
25
0,0015
35
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
35
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=25°C
5
5,8
6,5
V
1,3
2,11
2,25
2,40
V
0,25
mA
650
nA
6
Ω
56
56
19
26
492
ns
577
109
167
2,06
2,42
1,79
mWs
2,79
2530
132
pF
115
205
nC
0,96
K/W
copyright Vincotech
3
Revision: 3