English
Language : 

V23990-P717-G10-P2-14 Datasheet, PDF (3/6 Pages) Vincotech – 3~ phase input rectifier with or without BRC
Parameter
Input Rectifier Diode
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Input Rectifier Thyristor
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
Gate controlled delay time
Gate controlled rise time
Critical rate of rise of off-state voltage
Critical rate of rise of on-state current
Circuit commutated turn-off time
Holding current
Latching current
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Gate non-trigger current
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Brc Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Symbol
Characteristic Values
Conditions
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
IC [A] or
IF [A] or
ID [A]
Tj
V23990-P717-GXX-PM
preliminary datasheet
Value
Min
Typ
Max
Unit
VF
Vto
rt
Ir
RthJH
RthJC
Thermal grease
thickness≤50um
λ = 0,61 W/mK
42
42
42
1600
Tj=25°C
0,8
1,21
1,5
Tj=125°C
1,18
V
Tj=25°C
0,92
Tj=125°C
0,82
V
Tj=25°C
0,01
Tj=125°C
0,01
Ω
Tj=25°C
Tj=125°C
0,02
mA
1,58
K/W
1,04
VF
35
Vto
VD=6 V
35
rt
35
Ir
1200
tGD
IG=0,5A
VD=1/2 VDRM
tGR
(dv/dt)cr
VD=2/3 VDRM
linear voltage rise
(di/dt)cr
VD=2/3 VDRM
IG=0,3A; f=50Hz
tp=200 μs
40
tq VD=2/3 VDRM
tp=200 μs 100
27
IH
IL
IG=0,3A
tp=10 μs
VGT
VD=6 V
VD=6
IGT
VD=6
VGD VD=2/3 VDRM
IGD VD=2/3 VDRM
RthJH
RthJC
Thermal grease
thickness≤50um
λ = 0,61 W/mK
Tj=25°C
1
1,41
1,8
Tj=125°C
1,48
V
Tj=25°C
0,97
Tj=125°C
0,85
V
Tj=25°C
Tj=125°C
12,49
17,85
mΩ
Tj=25°C
Tj=150°C
0,05
8
mA
Tj=25°C
Tj=125°C
2
μs
Tj=25°C
Tj=125°C
tbd.
μs
Tj=150°C
1000
V/μs
Tj=150°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
500
A/μs
200
μs
100
mA
150
mA
1,5
V
55
mA
0,2
V
3
mA
1,26
K/W
0,83
VGE(th) VCE=VGE
VCE(sat)
15
ICES
0
IGES
20
Rgint
td(on)
tr
td(off)
tf
Rgon=32 Ω
Rgoff=16 Ω
±15
Eon
Eoff
Cies
Coss f=1MHz
0
Crss
QGate
15
RthJH
RthJC
Thermal grease
thickness≤50um
λ = 0,61 W/mK
1200
0
600
25
960
0,001
Tj=25°C
Tj=125°C
5
5,8
6,5
V
25
Tj=25°C
1,3
2,17
2,2
Tj=125°C
2,65
V
Tj=25°C
Tj=125°C
0,25
mA
Tj=25°C
Tj=125°C
650
nA
8
Ω
Tj=25°C
20,8
Tj=125°C
25,2
Tj=25°C
16,7
Tj=125°C
18
Tj=25°C
193
ns
25
Tj=125°C
Tj=25°C
335
112
Tj=125°C
170
Tj=25°C
1,80
Tj=125°C
Tj=25°C
1,16
1,77
mWs
Tj=125°C
1,52
1808
Tj=25°C
95
pF
82
25
Tj=25°C
155
nC
1,6
K/W
1,06
copyright by Vincotech
3
Revision: 2