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| V23990-P640-G20-PM Datasheet, PDF (3/16 Pages) Vincotech – Clip-in PCB mounting | |||
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V23990-P640-G20-PM
Parameter
Symbol
Characteristic Values
Conditions
V GE [V] or
V GS [V]
V r [V] or I C [A] or
V CE [V] or I F [A] or
V DS [V]
I D [A]
Tj
Value
Unit
Min
Typ
Max
Input Rectifier Diode
Forward voltage
VF
Threshold voltage (for power loss calc. only)
V to
Slope resistance (for power loss calc. only)
rt
Reverse current
Ir
Thermal resistance chip to heatsink per chip
R th(j-s)
Phase-Change
Material
50
65
65
1600
Tj=25°C
0,8
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,21
1,7
1,21
V
0,89
0,78
V
5,03
6,60
mâ¦
0,05
mA
0,84
K/W
Brake Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
V GE(th) VCE=VGE
V CEsat
15
I CES
0
I GES
20
R gint
t d(on)
tr
t d(off)
tf
Rgoff=8 â¦
Rgon=8 â¦
15
E on
E off
C ies
C oss f=1MHz
0
C rss
QG
15
Thermal resistance chip to heatsink per chip
R th(j-s)
Phase-Change
Material
1200
0
600
25
960
0,0017
Tj=25°C
Tj=150°C
5
50
Tj=25°C
1,3
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
35
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
50
Tj=25°C
5,8
1,88
2,26
4
32
31
17
21
372
482
69
122
1,34
1,98
2,16
3,71
2770
205
160
230
6,5
2,2
0,01
600
V
V
mA
nA
â¦
ns
mWs
pF
nC
0,79
K/W
Brake Inverse Diode
Diode forward voltage
VF
Thermal resistance chip to heatsink per chip
R th(j-s)
Phase-Change
Material
10
Tj=25°C
1,3
1,86
2,2
Tj=150°C
1,80
V
2,14
K/W
Brake Diode
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
VF
Ir
I RRM
t rr
Q rr Rgon=8 â¦
15
( di rf/dt )max
E rec
Thermal resistance chip to heatsink per chip
R th(j-s)
Phase-Change
Material
25
1200
600
35
Tj=25°C
1,3
1,85
2,2
Tj=150°C
1,81
V
Tj=25°C
Tj=150°C
10
µA
Tj=25°C
56
Tj=150°C
64
A
Tj=25°C
143
Tj=150°C
260
ns
Tj=25°C
Tj=150°C
2,99
5,48
µC
Tj=25°C
Tj=150°C
3694
2005
A/µs
Tj=25°C
Tj=150°C
1,29
2,44
mWs
1,73
K/W
copyright Vincotech
3
30 Jun. 2015 / Revision 2
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