30-F206NIA200SA-M105F Datasheet, PDF (3/24 Pages) Vincotech – Neutral-point-Clamped inverter

F206NIA200SA-M105F
preliminary datasheet
Parameter
Buck IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Buck Diode
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Symbol
Characteristic Values
Conditions
V_GE [V] or
V_GS [V]
V_r [V] or
V_CE [V] or
V_DS [V]
I_C [A] or
I_F [A] or
I_D [A]
T_j
Value
Min
Typ
Max
Unit
V_GE(th) VCE=VGE
V_CE(sat)
15
I_CES
0
I_GES
20
0,0032
Tj=25°C
Tj=150°C
5
5,8
6,5
V
200
Tj=25°C
1,05
1,51
1,85
Tj=150°C
1,75
V
600
Tj=25°C
Tj=150°C
0,66
mA
0
Tj=25°C
Tj=150°C
700
nA
R_gint
1
Ω
t_d(on)
Tj=25°C
Tj=150°C
t_r
Tj=25°C
Tj=150°C
t_{d(off) Rgoff=4 Ω}
±15
t_f
Rgon=4 Ω
350
200
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
E_on
Tj=25°C
Tj=150°C
E_off
Tj=25°C
Tj=150°C
240
245
42
42
310
341
71
104
3,14
4,22
6,14
7,89
ns
mWs
C_ies
12320
C_oss f=1MHz
0
25
Tj=25°C
768
pF
C_rss
366
Q_Gate
15
700
200
Tj=25°C
2100
nC
R_thJH
R_thJC
Thermal grease
thickness≤50um
λ = 1 W/mK
0,39
K/W
0,26
V_F
200
Tj=25°C
1,5
1,77
3,3
Tj=125°C
1,89
V
I_RRM
Tj=25°C
136
Tj=125°C
172
A
t_rr
Tj=25°C
137
Tj=125°C
269
ns
Q_rr Rgoff=4 Ω
±15
350
200
Tj=25°C
Tj=125°C
8,5
16,2
μC
di(rec)max
/dt
Tj=25°C
Tj=125°C
3158
2901
A/μs
Erec
Tj=25°C
Tj=125°C
2,02
3,66
mWs
R_thJH
R_thJC
Thermal grease
thickness≤50um
λ = 1 W/mK
0,60
K/W
0,40
Copyright by Vincotech
3
Revision: 4