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10-FZ122PB100SH-M819F28 Datasheet, PDF (3/7 Pages) Vincotech – High efficiency fast IGBT4 HS half-bridge
10-FZ122PB100SH-M819F28
10-PZ122PB100SH-M819F28Y
target datasheet
Half-bridge Switch
Parameter
Static
Gate-emitter threshold voltage
Collec tor-emitter saturation voltage
Collec tor-emitter c ut-off current
Gate-emitter leakage c urrent
Internal gate resistance
Input capacitance
Reverse transfer capac itance
Thermal
Thermal resistance junc tion to sink
Characteristic Values
Symbol
V GE(th) V GE=V CE
V CEsat
I CES
I GES
rg
C ies
f=1MHz
C res
Conditions
V GE [V] V CE [V] I C [A] T j[ °C] Min
Value
Typ Max
Unit
25
0,0038
125
25
15
100
125
150
25
0
1200
125
25
20
0
125
0
25
25
5,1
5,8
6,4
V
1,53
1,95
2,42
V
2,39
1,3
µA
120
nA
7,5
Ω
6150
pF
345
ph a s e -cha ng e
R th(j-s) material
ʎ=3,4W /mK
0,46
K/W
Half-bridge Diode
Parameter
Static
Forward voltage
Reverse leakage current
Thermal
Thermal resistance junction to sink
Symbol
VF
Ir
Conditions
V r [V] I F [A] T j [°C] Min
Value
Typ
Max
Unit
25
100
125
150
25
1200
150
2,50
2,52
V
2,37
120
µA
17700
R th(j-s)
phase-change
material ʎ=3,4W/mK
0,65
K/W
Copyright Vincotech
3
01 Nov. 2015 / Revision 1