10-FZ122PB080FV01-M818F98 Datasheet, PDF (3/7 Pages) Vincotech – High efficiency fast Fairchild IGBT

10-FZ122PB080FV01-M818F98
10-PZ122PB080FV01-M818F98Y
target datasheet
Half-Bridge Switch
Parameter
Static
Gate-emitter threshold voltage
Collec tor-emitter saturation voltage
Collec tor-emitter cut-off c urrent
Gate-emitter leakage current
Internal gate resistance
Input capacitance
Output capacitance
Reverse transfer c apac itanc e
Gate c harge
Thermal
Thermal resistanc e junction to sink
Half-Bridge Diode
Parameter
Static
Forward voltage
Reverse leakage current
Thermal
Thermal resistanc e junction to sink
Characteristic Values
Symbol
V _GE(th) V GE=V CE
V _CEsat
I _CES
I _GES
rg
C _ies
C _oes f=100 KHz
C _res
Q_g
Conditions
VGE [V]
VGS [V]
VCE [V]
VGS [V]
Vr [V]
IC [A]
ID [A]
IF [A]
Tj[°C]
Min
Value
Typ
Max
Unit
25
0,08
125
25
15
80
125
25
0
1200
125
25
20
0
125
0
30
25
15
600
80
25
5
6,8
7,3
V
1,5
1,80
2,5
V
100
µA
500
nA
none
Ω
8600
360
pF
200
740
nC
Thermal foil
R _th(j-s) thickness=76um
Kunze foil KU-ALF5
0,24
K/W
Symbol
VF
Ir
Conditions
VGE [V]
VGS [V]
VCE [V]
VGS [V]
Vr [V]
IC [A]
ID [A]
IF [A]
Tj[°C]
Min
Value
Typ
Max
Unit
25
75
125
150
25
1200
150
2,17
2,49
V
2,11
120
µA
14000
R th(j-s)
Thermal foil
thickn e s s =7 6µm
Kunze foil KU-ALF5
0,48
K/W
Copyright Vincotech
3
23 Dec. 2015 / Revision 2