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| 10-FZ062PA200SA01-P996F18 Datasheet, PDF (3/15 Pages) Vincotech – Trench Fieldstop IGBT technology | |||
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FZ06 / F0062PA200SA01
preliminary datasheet
Parameter
Inverter Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Inverter Diode
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
Symbol
Characteristic Values
Conditions
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
IC [A] or
IF [A] or
ID [A]
Tj
Value
Min
Typ
Max
Unit
VGE(th) VCE=VGE
0,0032
Tj=25°C
Tj=150°C
5
5,8
6,5
V
VCE(sat)
15
200
Tj=25°C
1
1,68
2,3
Tj=150°C
1,99
V
ICES
0
600
Tj=25°C
Tj=150°C
1,25
mA
IGES
20
0
Tj=25°C
0
Tj=150°C
1000
nA
Rgint
2
â¦
td(on)
Tj=25°C
Tj=150°C
tr
Tj=25°C
Tj=150°C
td(off) Rgoff=4 â¦
±15
tf
Rgon=4 â¦
300
200
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Eon
Tj=25°C
Tj=150°C
Eoff
Tj=25°C
Tj=150°C
209
222
32
38
267
301
82
98
1,57
2,56
5,8
7,66
ns
mWs
Cies
12335
Coss f=1MHz
0
25
Tj=25°C
769
pF
Crss
366
QGate
±15
480
200
Tj=25°C
RthJH
Thermal foil
thickness=76um
Kunze foil KU-
ALF5
1240
nC
0,33
K/W
VF
IRRM
trr
Qrr Rgoff=4 â¦
0
di(rec)max
/dt
Erec
RthJH
Thermal foil
thickness=76um
Kunze foil KU-
ALF5
200
Tj=25°C
1
1,73
2,3
Tj=150°C
1,7
V
Tj=25°C
Tj=150°C
160,7
209,6
A
Tj=25°C
Tj=150°C
117
142,4
ns
300
200
Tj=25°C
Tj=150°C
9,51
17,79
μC
Tj=25°C
Tj=150°C
5385
4096
A/μs
Tj=25°C
Tj=150°C
2,32
4,34
mWs
0,47
K/W
Copyright by Vincotech
3
Revision: 1
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