10-FZ062PA150SC-P995F08 Datasheet, PDF (3/15 Pages) Vincotech – Trench Fieldstop IGBT technology

FZ06 / F0062PA150SA
preliminary datasheet
Parameter
Inverter Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Inverter Diode
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Symbol
Characteristic Values
Conditions
V_GE [V] or
V_GS [V]
V_r [V] or
V_CE [V] or
V_DS [V]
I_C [A] or
I_F [A] or
I_D [A]
T_j
Value
Min
Typ
Max
Unit
V_GE(th) V_CE=V_GE
0,0024
Tj=25°C
Tj=150°C
5
5,8
6,5
V
V_CE(sat)
15
150
Tj=25°C
1
1,61
2,2
Tj=150°C
1,87
V
I_CES
0
600
Tj=25°C
Tj=150°C
0,96
mA
I_GES
20
0
Tj=25°C
Tj=150°C
700
nA
R_gint
2
Ω
t_d(on)
Tj=25°C
Tj=150°C
t_r
Tj=25°C
Tj=150°C
t_{d(off) Rgoff=4 Ω}
±15
t_f
Rgon=4 Ω
300
150
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
E_on
Tj=25°C
Tj=150°C
E_off
Tj=25°C
Tj=150°C
231
241
32
37
296
329
81
95
2,03
3
3,88
5,21
ns
mWs
C_ies
9240
C_oss f=1MHz
0
25
Tj=25°C
576
pF
C_rss
274
Q_Gate
±15
Tj=25°C
930
nC
R_thJH
R_thJC
Thermal grease
thickness≤50um
λ = 1 W/mK
0.76
K/W
V_F
50
Tj=25°C
1
1,71
2,2
Tj=150°C
1,6
V
I_RRM
Tj=25°C
Tj=150°C
123,92
161,1
A
t_rr
Tj=25°C
Tj=150°C
108,8
273,1
ns
Q_rr Rgon=4 Ω
±15
300
150
Tj=25°C
Tj=150°C
7,37
15,35
μC
di(rec)max
/dt
Tj=25°C
Tj=150°C
2262
2417
A/μs
Erec
Tj=25°C
Tj=150°C
1,62
3,48
mWs
R_thJH
R_thJC
Thermal grease
thickness≤50um
λ = 1 W/mK
1,11
K/W
Copyright by Vincotech
3
Revision: 1