10-FZ062PA100SA01-P994F18 Datasheet, PDF (3/6 Pages) Vincotech – Trench Fieldstop IGBT technology

10-FZ062PA100SA01-P994F18
target datasheet
Boost Switch
T_Paj=_rameter
Static
Gate-emitter threshold voltage
Collec tor-emitter saturation voltage
Collec tor-emitter c ut-off current
Gate-emitter leakage c urrent
Internal gate resistance
Input capacitance
Output capacitance
Reverse transfer capac itance
Thermal
Thermal resistance junc tion to sink
Characteristic Values
Symbol
V _GE(th) V GE⁼V CE
V _CEsat
I _CES
I _GES
rg
C _ies
C _oes f=1 MHz
C _res
Conditions
Value
V _GE [V] V _CE [V] I _C [A] T _j[ °C] Min Typ Max
Unit
25
0,004
125
25
15
100
125
150
25
0
600
125
25
20
0
125
0
25
25
5
5,8
6,5
V
1,05
1,57
1,85
1,75
V
5,1
µA
600
nA
2
Ω
6160
384
pF
183
Thermal grease
R _th(j-s) thickness≤50um
λ = 1 W /mK
0,60
K/W
Boost Diode
Parameter
Static
Forward voltage
Reverse leakage c urrent
Thermal
Thermal resistance junc tion to sink
Symbol
VF
Ir
Conditions
Value
Unit
V _r [V] I _F [A] T _j [°C] Min Typ Max
25
100
125
150
25
600
150
1,2
1,67
1,9
1,69
V
660
µA
R th(j-s)
Thermal grease
t hic kness≤50um
λ = 1 W/mK
1,00
K/W
Copyright Vincotech
3
13 Jul. 2015 / Revision 1