10-FZ062PA100SA-P994F08 Datasheet, PDF (3/15 Pages) Vincotech – Trench Fieldstop IGBT technology

10-FZ062PA100SA-P994F08
10-PZ062PA100SA-P994F08Y
datasheet
Parameter
Output Inverter Switch
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss
Turn-off energy loss
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance junction to sink
Output Inverter Diode
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance junction to sink
Characteristic Values
Symbol
Conditions
V _GE [V]
or
V _GS [V]
V _r [V]
or
V _CE [V]
or
V _DS [V]
I _C [A]
or
I _F [A]
or
I _D [A]
T _j [°C]
Value
Unit
Min Typ Max
V _GE(th)
V _CEsat
I _CES
I _GES
R _gint
t _d(on)
t_r
t _d(off)
t_f
E _on
E _off
C _ies
C _oss
C _rss
Q_G
R _th(j-s)
V CE=V GE
R goff=4 Ω
R gon=4 Ω
f=1MHz
phase-change
material
λ = 3,4 W/mK
15
0
20
±15
0
±15
600
0
300
25
0,0016
25
150
100
25
150
25
150
25
150
25
150
25
150
25
100
150
25
150
25
150
25
150
25
25
5
5,8
6,5
V
1
1,63
2,1
V
1,84
0,66
mA
700
nA
2
156
162
20
27
212
242
99
116
0,92
1,4
2,68
3,55
6160
Ω
ns
mWs
384
pF
183
620
nC
0,62
K/W
V_F
I _RRM
t _rr
Q _rr
R gon=4 Ω
( di _rf/dt )_max
E _rec
R _th(j-s)
phase-change
material
λ = 3,4 W/mK
±15
300
100
100
25
150
25
150
25
150
25
150
25
150
25
150
1
1,58
2,2
V
1,53
105,29
A
131,1
116
ns
138
4,92
µC
9,11
4869
3253
A/µs
1,13
2,15
mWs
1,01
K/W
copyright Vincotech
3
02 Dec. 2015 / Revision 2