10-FY07HVA075S5-L985F08 Datasheet, PDF (3/7 Pages) Vincotech – Innovative H6.5 topology

10-FY07HVA075S5-L985F08
10-PY07HVA075S5-L985F08Y
target datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
VGE [V]
VGS [V]
VCE [V]
VDS [V]
VF [V]
IC [A]
ID [A]
IF [A]
Tj [°C]
Min
Typ
Max
High Buck Switch / Low Buck Switch
Static
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
VGE(th) VGE = VCE
VCEsat
ICES
0,00075 25
25
15
75
125
0
650
25
3,2
4
4,8
1,42
1,55
1,75
50
Gate-emitter leakage current
IGES
20
0
25
100
Internal gate resistance
rg
none
Input capacitance
Cies
4500
Output capacitance
Coes
f = 1 MHz
0
25
25
130
Reverse transfer capacitance
Cres
17
Gate charge
Qg
15
520
75
25
164
Thermal
Thermal resistance junction to sink
Boost Switch
Static
Rth(j-s)
phase-change
material
λ = 3,4 W/mK
1,11
Gate-emitter threshold voltage
VGE(th) VGE = VCE
0,001 25
4,2
5
5,8
Collector-emitter saturation voltage
VCEsat
15
75
25
1,05
1,45
Collector-emitter cut-off current
ICES
0
650
25
40
Gate-emitter leakage current
IGES
20
0
25
100
Internal gate resistance
rg
none
Input capacitance
Reverse transfer capacitance
Cies
f = 1 MHz
0
25
25
Cres
11625
30
Thermal
Thermal resistance junction to sink
Rth(j-s)
phase-change
material
λ = 3,4 W/mK
0,96
Unit
V
V
µA
nA
Ω
pF
nC
K/W
V
V
µA
nA
Ω
pF
K/W
Copyright Vincotech
3
26 Jul. 2016 / Revision 1