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10-F106BIB020FK-M285L Datasheet, PDF (3/5 Pages) Vincotech – High efficiency symmetric boost
10-F106BIB020FK-M285L
target datasheet
Parameter
Input Boost MOSFET
Static drain to source ON resistance
Gate threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Turn On Delay Time
Rise Time
Turn off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Total gate charge
Gate to source charge
Gate to drain charge
Input capacitance
Output capacitance
Reverse transfer capacitance
Thermal resistance chip to heatsink per chip
Input Boost Diode
Forward voltage
Reverse leakage current
Peak recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovered energy
Peak rate of fall of recovery current
Thermal resistance chip to heatsink per chip
Thermistor
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
B-value
Vincotech NTC Reference
Symbol
Characteristic Values
Conditions
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
IC [A] or
IF [A] or
ID [A]
Tj
Value
Min
Typ
Max
Unit
RDS(on)
V(GS)th VGS=VDS
Igss
20
Idss
0
td(ON)
tr
td(OFF)
tf
Rgoff=2,4 Ω
Rgon=2,4 Ω
10
Eon
Eoff
Qg
Qgs
10
Qgd
Ciss
Coss f=1MHz
0
Crss
RthJH
Thermal grease
thickness≤50um
λ = 1 W/mK
69
Tj=25°C
Tj=125°C
0,019
0,038
Ω
0,0005
Tj=25°C
Tj=125°C
3
4
5
V
0
Tj=25°C
Tj=125°C
400
nA
650
Tj=25°C
Tj=125°C
2
200
μA
Tj=25°C
36
Tj=125°C
Tj=25°C
90
Tj=125°C
Tj=25°C
130
ns
400
80
Tj=125°C
Tj=25°C
40
Tj=125°C
Tj=25°C
tbd
Tj=125°C
Tj=25°C
tbd
mWs
Tj=125°C
Tj=25°C
360
Tj=125°C
520
69
Tj=25°C
Tj=125°C
120
nC
Tj=25°C
Tj=125°C
140
19600
100
Tj=25°C
400
pF
12
0,38
K/W
VF
Irm
IRRM
trr
Qrr diF/dt = 200 A/us
Erec
di(rec)max
/dt
RthJH
Thermal grease
thickness≤50um
λ = 1 W/mK
120
Tj=25°C
Tj=125°C
390
120
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
390
120
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,4
1,3
V
200
1000
μA
11
25
A
60
138
ns
tbd
μC
tbd
mWs
tbd
A/μs
0,70
K/W
R
ΔR/R R100=1486 Ω
P
B(25/50) Tol. ±3%
B(25/100) Tol. ±3%
T=25°C
T=100°C
T=25°C
T=25°C
T=25°C
T=25°C
22000
Ω
-5
5
%
200
mW
2
mW/K
3950
K
3996
K
B
copyright by Vincotech
3
Revision: 3