V23990-P640-G-PM Datasheet, PDF (2/13 Pages) Vincotech – Optionally with brake chopper

Parameter
Maximum Ratings
Symbol
Condition
V23990-P640-G/H-PM
preliminary datasheet
Value
Unit
Transistor BRC
Collector-emitter break down voltage
DC collector current
V_CE
I_C
T_j=T_jmax
T_h=80°C
1200
V
34
A
Repetitive peak collector current
Power dissipation per IGBT
I_cpuls
P_tot
t_p limited by T_jmax
T_j=T_jmax
T_h=80°C
105
A
65
W
Gate-emitter peak voltage
V_GE
±20
V
Short circuit ratings*
t_SC
T_j≤150°C
V_CC
V_GE=15V
10
μs
900
V
Maximum junction temperature
T_jmax
150
°C
* It is recommended to not exceed 1000 short circuit situations in the lifetime of the module and to allow at least 1s between short circuits
BRC inverse diode
Peak Repetitive Reverse Voltage
DC forward current
V_RRM
I_F
T_j=T_jmax
T_h=80°C
1200
V
6
A
Repetitive peak forward current
Power dissipation per Diode
I_FRM
t_p limited by T_jmax
P_tot
T_j=T_jmax
T_h=80°C
6
A
19
W
Maximum junction temperature
T_jmax
150
°C
Diode BRC
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum junction temperature
V_RRM
I_F
I_FRM
P_tot
T_jmax
T_j=T_jmax
t_p limited by T_jmax
T_j=T_jmax
T_h=80°C
T_h=80°C
1200
V
23
A
50
A
38
W
150
°C
Thermal properties
Storage temperature
T_stg
Operation temperature
T_op
-40...+125
°C
-40...+110
°C
Copyright by Vincotech
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