10-FZ06NRA069FP02-P967F68 Datasheet, PDF (2/7 Pages) Vincotech – Parallel switch for high speed and efficiency

Tj=25°C, unless otherwise specified
Parameter
Buck MOSFET
Drain to source breakdown voltage
DC drain current
Pulsed drain current
Power dissipation
Gate-source peak voltage
Maximum Junction Temperature
Boost IGBT
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
Boost Inverse Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
Boost Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
10-FZ06NRA069FP02-P967F68
10-PZ06NRA069FP02-P967F68Y
target datasheet
Maximum Ratings
Symbol
Condition
Value
Unit
V_DS
I_D
I_Dpulse
P_tot
Vgs
T_jmax
T_j=T_jmax
t_p limited by T_jmax
T_j=T_jmax
T_h=80°C
T_c=80°C
Tc=25°C
T_h=80°C
T_c=80°C
600
V
15
A
19
112
A
62
W
93
±20
V
150
°C
V_CE
I_C
I_Cpuls
P_tot
V_GE
t_SC
V_CC
T_jmax
T_j=T_jmax
t_p limited by T_jmax
T_j=T_jmax
T_j≤150°C
V_GE=15V
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
600
V
49
A
63
225
A
93
W
141
±20
V
6
µs
360
V
175
°C
V_RRM
I_F
I_FRM
P_tot
T_jmax
T_c=25°C
T_j=T_jmax
t_p limited by T_jmax
T_j=T_jmax
V_RRM
I_F
I_FRM
P_tot
T_jmax
T_j=25°C
T_j=T_jmax
t_p limited by T_jmax
T_j=T_jmax
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
600
V
16
A
20
20
A
32
W
49
175
°C
1200
V
16
A
22
36
A
31
W
47
150
°C
copyright Vincotech
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Revision: 1