10-FZ06NRA041FS02-P965F68 Datasheet, PDF (2/27 Pages) Vincotech – Neutral point clamped inverter

Tj=25°C, unless otherwise specified
Parameter
Buck MOSFET
Drain to source breakdown voltage
DC drain current
Pulsed drain current
Power dissipation
Gate-source peak voltage
Maximum Junction Temperature
Boost IGBT
Collector-emitter break down voltage
DC collector current
Pulsed collector current
Turn off safe operating area
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
Boost Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak surge current
Power dissipation per Diode
Maximum Junction Temperature
Thermal Properties
Storage temperature
Operation temperature under switching condition
Insulation Properties
Insulation voltage
Creepage distance
Clearance
10-FZ06NRA041FS02-P965F68
10-PZ06NRA041FS02-P965F68Y
Maximum Ratings
Symbol
Condition
Value
Unit
V_DS
I_D
I_{D pulse}
P_tot
V_GS
T_jmax
T_j=T_jmax
t_p limited by T_jmax
T_j=T_jmax
T_h=80°C
T_c=80°C
Tc=25°C
T_h=80°C
T_c=80°C
600
V
29
A
35
272
A
78
W
118
±20
V
150
°C
V_CE
I_C
I_Cpuls
P_tot
V_GE
t_SC
V_CC
T_jmax
T_j=T_jmax
t_p limited by T_jmax
T_j≤175°C
V_CE<=V_CES
T_j≤150°C
V_GE=15V
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
600
V
58
A
77
225
A
225
A
93
W
141
±20
V
6
µs
360
V
175
°C
V_RRM
I_F
I_FRM
P_tot
T_jmax
T_j=T_jmax
20kHz Square Wave
T_j=T_jmax
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
1200
V
17
A
23
36
A
33
W
50
150
°C
T_stg
T_op
V_is
t=2s
DC voltage
-40…+125
°C
-40…+(Tjmax - 25)
°C
4000
V
min 12,7
mm
min 12,7
mm
copyright by Vincotech
2
Revision: 1