10-F006PPA020SB01-M685B10 Datasheet, PDF (2/30 Pages) Vincotech – Clip in PCB mounting

T_j=25°C, unless otherwise specified
Parameter
PFC MOSFET
Drain to source breakdown voltage
DC drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Power dissipation
Gate-source peak voltage
Reverse diode dv/dt
Maximum Junction Temperature
PFC Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation
Maximum Junction Temperature
PFC Shunt
DC forward current
Power dissipation per Shunt
Inverter Transistor
Collector-emitter break down voltage
DC collector current
Pulsed collector current
Turn off safe operating area
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
copyright Vincotech
10-F006PPA020SB01-M685B10
preliminary datasheet
Maximum Ratings
Symbol
Condition
Value
Unit
V_DS
I_D
I_Dpulse
E_AS
E_AR
I_AR
dv/dt
P_tot
V_GS
dv/dt
T_jmax
T_j=T_jmax
Tj=25°C
I_D=9,3A
V_DD=50V
I_D=9,3A
V_DD=50V
V_DS=0...480V
T_j=T_jmax
V_DS=0...400V , I_SD ≤ I_D
V_RRM
I_F
I_FRM
P_tot
T_jmax
T_j=25°C
T_j=T_jmax
t_p limited by T_jmax
T_j=T_jmax
I_F
P_tot
T_h=80°C
T_c=80°C
T_j=25°C
T_j=25°C
T_h=80°C
T_c=80°C
T_j=25°C
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
T_c=25°C
T_c=25°C
600
20
24
159
1135
1,72
9,3
50
64
97
±20
15
150
V
A
A
mJ
mJ
A
V/ns
W
V
V/ns
°C
600
V
23
A
30
99
A
36
W
54
150
°C
55
A
3
W
V_CE
I_C
I_Cpulse
P_tot
V_GE
t_SC
V_CC
T_jmax
T_j=T_jmax
t_p limited by T_jmax
VCE ≤ 600V, Tj ≤ Top max
T_j=T_jmax
T_j≤150°C
V_GE=15V
2
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
600
V
20
A
27
60
A
60
A
41
W
62
±20
V
6
µs
360
V
175
°C
Revision: 1