10-F006PPA015SB-M684B Datasheet, PDF (2/30 Pages) Vincotech – Clip in PCB mounting

T_j=25°C, unless otherwise specified
Parameter
PFC MOSFET
Drain to source breakdown voltage
DC drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Power dissipation
Gate-source peak voltage
Reverse diode dv/dt
Maximum Junction Temperature
PFC Diode
Peak Repetitive Reverse Voltage
DC forward current
Non-repetitive Peak Surge Current
Power dissipation
Maximum Junction Temperature
PFC Shunt
DC forward current
Power dissipation per Shunt
Inverter Transistor
Collector-emitter break down voltage
DC collector current
Pulsed collector current
Turn off safe operating area
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
copyright Vincotech
10-F006PPA015SB-M684B
preliminary datasheet
Maximum Ratings
Symbol
Condition
Value
Unit
V_DS
I_D
I_Dpulse
E_AS
E_AR
I_AR
dv/dt
P_tot
V_GS
dv/dt
T_jmax
T_j=T_jmax
T_j=25°C
I_D=9,3A
V_DD=50V
I_D=9,3A
V_DD=50V
V_DS=0...480V
T_j=T_jmax
V_DS=0...400V , I_SD ≤ I_D
T_h=80°C
T_c=80°C
Tj=25°C
Tj=25°C
T_h=80°C
T_c=80°C
Tj=25°C
V_RRM
I_F
I_FSM
P_tot
T_jmax
T_j=25°C
T_j=T_jmax
60Hz Single Half-Sine Wave
T_j=T_jmax
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
I_F
T_c=25°C
P_tot
T_c=25°C
600
20
24
159
1135
1,72
9,3
50
64
97
±20
15
150
V
A
A
mJ
mJ
A
V/ns
W
V
V/ns
°C
600
V
21
A
28
300
A
34
W
52
150
°C
55
A
3
W
V_CE
I_C
I_Cpulse
P_tot
V_GE
t_SC
V_CC
T_jmax
T_j=T_jmax
t_p limited by T_jmax
VCE ≤ 600V, Tj ≤ Top max
T_j=T_jmax
T_j≤150°C
V_GE=15V
2
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
600
V
19
A
25
45
A
45
A
45
W
69
±20
V
6
µs
360
V
175
°C
Revision: 1