10-F006PPA010SB-M683B Datasheet, PDF (2/30 Pages) Vincotech – Clip in PCB mounting

T _j=25°C, unless otherwise specified
Parameter
PFC MOSFET
Drain to source breakdown voltage
DC drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Power dissipation
Gate-source peak voltage
Reverse diode dv/dt
Maximum Junction Temperature
PFC Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation
Maximum Junction Temperature
PFC Shunt
DC forward current
Power dissipation per Shunt
Inverter Transistor
Collector-emitter break down voltage
DC collector current
Pulsed collector current
Turn off safe operating area
Power dissipation
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
copyright Vincotech
10-F006PPA010SB-M683B
10-F006PPA010SB-M683BY
datasheet
Maximum Ratings
Symbol
Condition
Value
Unit
V _DS
I_D
I _Dpulse
E _AS
E _AR
I _AR
dv /dt
P _tot
V _GS
dv /dt
T _jmax
T_j=T_jmax
t_p limited by T_jmax
I_D=6,6A
V_DD=50V
I_D=6,6A
V_DD=50V
V_DS=0...480V
T_j=T_jmax
V _RRM
I_F
I _FRM
P _tot
T _jmax
T_j=25°C
T_j=T_jmax
t_p limited by T_jmax
T_j=T_jmax
I_F
P _tot
T_h=80°C
T_c=80°C
Tj=25°C
Tj=25°C
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
T_c=25°C
T_c=25°C
600
V
17
A
20
112
A
796
mJ
1,2
mJ
6,6
A
50
V/ns
59
W
90
20
V
15
V/ns
150
°C
600
V
20
A
20
30
A
36
W
54
175
°C
15,8
A
5
W
V _CE
I_C
I _CRM
P _tot
V _GE
t _SC
V _CC
T _jmax
T_j=T_jmax
t_p limited by T_jmax
V_CE ≤ 400V, Tj≤150°C
T_j=T_jmax
T_j≤150°C
V_GE=15V
2
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
600
V
14
A
18
30
A
30
A
33
W
51
20
V
5
µs
360
V
175
°C
02 Apr. 2015 / Revision 2