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| 10-FZ07NMA100SM-M265F58 Datasheet, PDF (17/29 Pages) Vincotech – Mixed voltage NPC topology | |||
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Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
7500
dIrec/dt T
di0/dt T
6000
4500
3000
1500
0
0
25
50
At
Tj =
VCE =
VGE =
Rgon =
25/125 °C
150
V
±15
V
4
â¦
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
10-FZ07NMA100SM-M265F58
Neutral point
Neutral Point IGBT and Half Bridge FWD
FWD
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
7500
dIrec/dt T
dI0/dt T
6000
4500
3000
1500
75
I C (A)
100
0
0
4
8
12
At
Tj =
VR =
IF =
VGE =
25/125 °C
150
V
50
A
±15
V
IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
FWD
16
R gon ( â¦) 20
FWD
100
100
D = 0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-5
10-4
10-3
10-2
10-1
100
t p (s)
11001 2
D = 0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-5
10-4
10-3
10-2
10-1
100
t p (s) 110012
At
At
D=
tp / T
D=
tp / T
RthJH =
1,16
K/W
RthJH =
1,36
K/W
IGBT thermal model values
FWD thermal model values
R (C/W) Tau (s)
5,64E-02 4,97E+00
1,45E-01 9,35E-01
4,55E-01 1,51E-01
3,75E-01 4,97E-02
7,15E-02 5,37E-03
5,72E-02 3,97E-04
R (C/W) Tau (s)
6,09E-02 2,36E+00
1,41E-01 3,82E-01
6,52E-01 6,81E-02
2,75E-01 2,04E-02
1,29E-01 4,50E-03
1,02E-01 6,56E-04
copyright by Vincotech
17
Revision: 1
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