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V23990-P580-X4X-D2-14 Datasheet, PDF (14/23 Pages) Vincotech – Industrial drives Embedded drives
Brake
V23990-P580-*4*-PM
Figure 5
Typical switching energy losses
as a function of collector current
E = f(IC)
5,0
Tj = Tjmax -25°C
4,0
3,0
2,0
Brake IGBT
Eon
Eoff
Eoff
1,0
0,0
0
10
20
With an inductive load at
Tj =
VCE =
VGE =
Rgon =
Rgoff =
25/150 °C
600
V
±15
V
32
Ω
32
Ω
Tj = 25°C
30
40
I C (A) 50
Figure 7
Typical reverse recovery energy loss
as a function of collector current
Erec = f(IC)
1,6
1,4
Tj = Tjmax - 25°C
Brake FWD
Erec
1,2
1,0
0,8
Erec
0,6
Tj = 25°C
0,4
0,2
0,0
0
10
20
30
40
I C (A) 50
With an inductive load at
Tj =
25/150 °C
VCE =
600
V
VGE =
±15
V
Rgon =
32
Ω
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(RG)
7,00
6,00
5,00
4,00
Tj = Tjmax -25°C
3,00
2,00
1,00
0,00
0
Tj = 25°C
25
50
With an inductive load at
Tj =
VCE =
VGE =
IC =
25/150 °C
600
V
±15
V
25
A
Brake IGBT
Eon
Eon
Eoff
Eoff
75
100
R G ( Ω12)5
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
1,6
Brake FWD
1,4
Tj = Tjmax -25°C
1,2
Erec
1,0
0,8
0,6
Tj = 25°C
Erec
0,4
0,2
0,0
0
25
50
75
100
125 R G ( Ω ) 150
With an inductive load at
Tj =
25/150 °C
VCE =
600
V
VGE =
±15
V
IC =
25
A
copyright Vincotech
14
Revision: 2