V23990-P848-X5X-P1-14 Datasheet, PDF (13/22 Pages) Vincotech – Industrial Drives Embedded Generation

Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_C)
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0
0
2
4
With an inductive load at
T_j =
V_CE =
V_GE =
R_gon =
R_goff =
25/150 °C
600
V
±15
V
64
Ω
64
Ω
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E_rec = f(I_c)
0,6
0,5
0,4
0,3
0,2
0,1
0
0
2
4
With an inductive load at
T_j =
V_CE =
V_GE =
R_gon =
25/150 °C
600
V
±15
V
64
Ω
Brake
V23990-P848-A58/A59/C58/C59-PM
preliminary datasheet
Brake IGBT
E_on
E_off
E_on
E_off
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
6
8
I_C (A)
0
0
60
120
180
With an inductive load at
T_j =
V_CE =
V_GE =
I_C =
25/150 °C
600
V
±15
V
4
A
Brake IGBT
E_rec
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
0,6
0,5
0,4
E_rec
0,3
0,2
0,1
6
8
I_C (A)
0
0
60
120
180
With an inductive load at
T_j =
V_CE =
V_GE =
I_C =
25/150 °C
600
V
±15
V
4
A
Brake IGBT
E_on
E_on
E_off
E_off
240 _RG(Ω) 300
Brake IGBT
E_rec
E_rec
240 R_G (Ω) 300
copyright Vincotech
13
Revision: 1