70-W212NMA400SC-M209P Datasheet, PDF (13/28 Pages) Vincotech – Mixed voltage NPC

Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_C)
25
20
15
10
5
0
0
200
400
With an inductive load at
T_j =
V_CE =
V_GE =
R_gon =
R_goff =
25/125 °C
350
V
±15
V
1
Ω
1
Ω
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E_rec = f(I_c)
20
15
10
5
0
0
200
400
With an inductive load at
T_j =
25/125 °C
V_CE =
350
V
V_GE =
±15
V
R_gon =
1
Ω
70-W212NMA400SC-M209P
datasheet
Boost
neutral point IGBT and half bridge FWD
IGBT
E_{off High T}
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
40
E_{off Low T}
30
20
E_{on High T}
E_{on Low T}
10
IGBT
E_{on High T}
E_{on Low T}
E_{off High T}
E_{off Low T}
600
I C (A)
800
0
0
2
4
6
With an inductive load at
T_j =
V_CE =
V_GE =
I_C =
25/125 °C
350
V
±15
V
400
A
FWD
E_{rec High T}
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
15
12
9
E_{rec Low T}
6
3
600
800
I C (A)
0
0
2
4
6
With an inductive load at
T_j =
25/125 °C
V_CE =
350
V
V_GE =
±15
V
I_C =
400
A
8 _{R G( Ω )} 10
FWD
E_{rec High T}
E_{rec Low T}
8 _{R G ( Ω )} 10
copyright by Vincotech
13
Revision: 7