30-P2126PA075NB-L288F69Y Datasheet, PDF (12/17 Pages) Vincotech – Compact and low inductive design

30-P2126PA075NB-L288F69Y
datasheet
Inverter Switching Definitions
General conditions
Tj
R gon
= 125 °C
= 4Ω
R goff
= 4Ω
Figure 1.
Turn-of f Swit ching Wavef orms & def init ion of tdof f , tEof f (t Eof f = int egrating t ime f or Eof f )
125
%
t_doff
IGBT
100
V_CE
V_{GE 90%}
V_{CE 90%}
75
V_GE
50
t_Eoff
25
I_C
I_{C 1%}
0
-25
-0,1
0
0,1
0,2
0,3
0,4
V GE (0%) =
V GE (100%) =
V C (100%) =
I C (100%) =
t doff =
t Eoff =
Figure 3.
- 15
V
15
V
600
V
76
A
0,180
µs
0,553
µs
Turn-of f Swit ching Wavef orms & def init ion of tf
125
%
I_C
100
fitted
I_{C 90%}
75
I_{C 60%}
50
I_{C 40%}
25
I_C10%
0
t_f
0,5
0,6
t (µs)
IGBT
V_CE
-25
0
0,05
0,1
0,15
0,2
0,25
0,3
0,35
0,4
t (µs)
V C (100%) =
I C (100%) =
tf =
600
V
76
A
0,079
µs
Figure 2.
Turn-on Swit ching Wavef orms & def init ion of t don, t Eon (tEon = int egrat ing t ime f or Eon)
350
%
I_C
300
IGBT
250
200
150
V_CE
100
V_GE
t_don
50
V_{0 GE 10%}
I_{C 10%}
t_Eon
-50
2,95
3
3,05
3,1
V GE (0%) =
V GE (100%) =
V C (100%) =
I C (100%) =
t don =
t Eon =
Figure 4.
- 15
V
15
V
600
V
76
A
0,052
µs
0,170
µs
Turn-on Swit ching Wavef orms & def init ion of t r
350
%
I_C
300
V_{CE 3%}
3,15
3,2
t (µs)
IGBT
250
200
150
V_CE
100
50
0
t_r
I_{C 90%}
I_{C 10%}
-50
3
V C (100%) =
I C (100%) =
tr =
3,02
3,04
600
76
0,006
3,06
V
A
µs
3,08
3,1
3,12
t (µs)
Copyright Vincotech
12
01 Jun. 2015 / Revision 1