V23990-P588-X4X-D2-14 Datasheet, PDF (11/23 Pages) Vincotech – Industrial drives mbedded drives

Output Inverter
V23990-P588-*4*-PM
preliminary datasheet
Figure 25
Safe operating area as a function
of collector-emitter voltage
I_C = f(V_CE)
10³
Output inverter IGBT
100uS
10uS
10²
1mS
10mS
10¹
100mS
DC
10⁰
Figure 26
Gate voltage vs Gate charge
V_GE = f(Q_GE)
20
16
240V
12
8
4
Output inverter IGBT
960V
10^-1
10⁰
At
D=
T_h =
V_GE =
T_j =
10¹
single pulse
80
ºC
±15
V
T_jmax
ºC
10²
V CE (V)
10³
Figure 27
Short circuit withstand time as a function of
gate-emitter voltage
t_sc = f(V_GE)
17,5
Output inverter IGBT
15
12,5
10
7,5
5
2,5
0
12
13
14
15
16
17
18
19
20
V GE (V)
At
V_CE =
1200
V
T_j ≤
175
ºC
0
0
25
50
At
I_C =
15
A
75
100
125
Q g (nC)
Figure 28
Output inverter IGBT
Typical short circuit collector current as a function of
gate-emitter voltage
V_GE = f(Q_GE)
125
100
75
50
25
0
12
14
16
At
V_CE ≤
1200
V
T_j =
175
ºC
18
20
V GE (V)
copyright Vincotech
11
Revision: 2