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| V23990-P769-A-P1-14 Datasheet, PDF (10/24 Pages) Vincotech – 3~rectifier,BRC,Inverter, NTC | |||
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Output Inverter
V23990-P769-A-PM
prel datasheet
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
6000
dI0/dt
dIrec/dt
5000
4000
3000
2000
1000
0
0
25
50
75
At
Tj =
VCE =
VGE =
Rgon =
25/150 °C
600
V
±15
V
8
â¦
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
Output inverter FRED
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
12000
10000
Output inverter FRED
dI0/dt
dIrec/dt
8000
6000
4000
2000
100
125 I C (A) 150
0
0
8
16
24
32 R Gon ( Ω) 40
At
Tj =
VR =
IF =
VGE =
25/150 °C
600
V
75
A
±15
V
Output inverter IGBT
Figure 20
FRED transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
Output inverter FRED
10-1
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-5
10-4
10-3
10-2
10-1
100 t p (s)
1011
At
D=
tp / T
RthJH =
0,451
K/W
Single device heated
RthJH =
0,54
K/W
AlI devices heated
IGBT thermal model values
R (C/W)
0,05
0,08
0,19
0,09
0,02
0,02
Tau (s)
3,0E+00
4,5E-01
7,6E-02
1,7E-02
1,7E-03
2,9E-04
R (C/W)
0,13
0,08
0,19
0,09
0,02
0,02
10-1
10-2
10-5
10-4
10-3
10-2
10-1
At
D=
tp / T
RthJH =
0,70
K/W
Single device heated
RthJH =
0,70
AlI devices heated
FRED thermal model values
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
100
t p (s) 1011
K/W
R (C/W)
0,02
0,08
0,17
0,31
0,08
0,05
Tau (s)
9,9E+00
1,4E+00
1,6E-01
3,6E-02
7,1E-03
5,3E-04
R (C/W)
0,02
0,08
0,17
0,31
0,08
0,05
copyright Vincotech
10
Revision: 1
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