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| V23990-P769-A-D5-14 Datasheet, PDF (10/24 Pages) Vincotech – 3~rectifier,BRC,Inverter, NTC | |||
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Output Inverter
V23990-P769-A-PM
V23990-P769-AY-PM
datasheet
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
5000
dI0/dt
dIrec/dt
4000
Output inverter FWD
3000
2000
1000
0
0
At
Tj =
VCE =
VGE =
Rgon =
25
255//115500
600
±15
8
50
°C
V
V
â¦
75
100
125 I C (A) 150
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
Output inverter FWD
12000
10000
dI0/dt
dIrec/dt
8000
6000
4000
2000
0
0
8
16
24
32 R Gon ( â¦) 40
At
Tj =
VR =
IF =
VGE =
255//115500 °C
600
V
75
A
±15
V
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
Output inverter IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
Output inverter FWD
10-1
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-5
10-4
10-3
10-2
10-1
100 t p (s)
10110
At
D=
tp / T
RthJH =
0,451
K/W
Single device heated
RthJH =
0,54
AlI devices heated
IGBT thermal model values
K/W
R (K/W)
0,05
0,08
0,19
0,09
0,02
0,02
Tau (s)
3,0E+00
4,5E-01
7,6E-02
1,7E-02
1,7E-03
2,9E-04
R (K/W)
0,13
0,08
0,19
0,09
0,02
0,02
Tau (s)
3,0E+00
4,5E-01
7,6E-02
1,7E-02
1,7E-03
2,9E-04
10-1
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-5
10-4
10-3
10-2
10-1
100
t p (s) 10110
At
D=
tp / T
RthJH =
0,70
K/W
Single device heated
RthJH =
0,70
AlI devices heated
FWD thermal model values
K/W
R (K/W)
0,02
0,08
0,17
0,31
0,08
0,05
Tau (s)
9,9E+00
1,4E+00
1,6E-01
3,6E-02
7,1E-03
5,3E-04
R (K/W)
0,02
0,08
0,17
0,31
0,08
0,05
Tau (s)
9,9E+00
1,4E+00
1,6E-01
3,6E-02
7,1E-03
5,3E-04
copyright Vincotech
10
05 Jun 2015 / Revision: 5
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