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| V23990-P765-A-D4-14 Datasheet, PDF (10/24 Pages) Vincotech – 3~rectifier,BRC,Inverter, NTC | |||
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Output Inverter
V23990-P765-A-PM
datasheet
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
10000
Output inverter FWD
8000
6000
4000
2000
0
0
40
80
At
Tj =
VCE =
VGE =
Rgon =
255//115500 °C
300
V
±15
V
4
â¦
dI0/dt
dIrec/dt
120
160
I C (A) 200
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
Output inverter FWD
12000
10000
dI0/dt
dIrec/dt
8000
6000
4000
2000
0
0
4
8
12
16 R Gon ( â¦) 20
At
Tj =
VR =
IF =
VGE =
255//115500 °C
300
V
100
A
±15
V
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
Output inverter IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
Output inverter FWD
10-1
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0,000
10-2
10-5
10-4
10-3
10-2
10-1
100 t p (s)
10110
At
D=
tp / T
RthJH =
0,502
K/W
RthJH =
0,60
Single device heated
AlI devices heated
IGBT thermal model values
K/W
R (K/W)
0,01
0,07
0,11
0,19
0,06
0,02
0,03
Tau (s)
1,0E+01
1,7E+00
2,3E-01
4,9E-02
9,5E-03
1,0E-03
1,5E-04
R (K/W)
0,11
0,07
0,11
0,19
0,06
0,02
0,03
10-1
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0,000
10-2
10-5
10-4
10-3
10-2
10-1
100
t p (s) 10110
At
D=
tp / T
RthJH =
0,79
K/W
RthJH =
0,79
Single device heated
AlI devices heated
FWD thermal model values
K/W
R (K/W)
0,02
0,08
0,21
0,35
0,07
0,06
Tau (s)
7,9E+00
1,2E+00
1,3E-01
2,8E-02
4,4E-03
3,4E-04
R (K/W)
0,02
0,08
0,21
0,35
0,07
0,06
copyright Vincotech
10
23 Dec 2014 / Revision: 4
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