V23990-P764-A-D4-14 Datasheet, PDF (10/24 Pages) Vincotech – 3~rectifier,BRC,Inverter, NTC

Output Inverter
V23990-P764-A-PM
datasheet
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI₀/dt,dI_rec/dt = f(I_c)
8000
7000
6000
5000
4000
3000
2000
1000
0
0
25
50
75
At
T_j =
V_CE =
V_GE =
R_gon =
255//115500 °C
300
V
±15
V
4
Ω
Output inverter FWD
dIrec/dt
dI0/dt
100
125 I C (A) 150
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI₀/dt,dI_rec/dt = f(R_Gon)
Output inverter FWD
9000
dIrec/dt
8000
dI0/dt
7000
6000
5000
4000
3000
2000
1000
0
0
4
8
12
16 R Gon ( Ω) 20
At
T_j =
V_R =
I_F =
V_GE =
255//115500 °C
300
V
75
A
±15
V
Figure 19
IGBT transient thermal impedance
as a function of pulse width
Z_thJH = f(tp)
10⁰
Output inverter IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
Z_thJH = f(tp)
10⁰
Output inverter FWD
10^-1
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10^-2
10^-5
10^-4
10^-3
10^-2
10^-1
10^{0 t p (s)}
10¹10
At
D=
tp / T
R_thJH =
0,658
K/W
R_thJH =
0,76
Single device heated
AlI devices heated
IGBT thermal model values
K/W
R (K/W)
0,02
0,09
0,16
0,28
0,07
0,04
Tau (s)
1,1E+01
1,5E+00
1,8E-01
3,6E-02
7,9E-03
5,2E-04
R (K/W)
0,12
0,09
0,16
0,28
0,07
0,04
10^-1
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10^-2
10^-5
10^-4
10^-3
10^-2
10^-1
10⁰
t p (s) ₁₀1₁₀
At
D=
tp / T
R_thJH =
0,90
K/W
R_thJH =
0,90
Single device heated
AlI devices heated
FWD thermal model values
K/W
R (K/W)
0,04
0,09
0,18
0,40
0,12
0,07
Tau (s)
5,6E+00
1,1E+00
1,5E-01
2,7E-02
6,0E-03
4,3E-04
R (K/W)
0,04
0,09
0,18
0,40
0,12
0,07
copyright Vincotech
10
23 Dec 2014 / Revision: 4