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| V23990-P763-A-D3-14 Datasheet, PDF (10/24 Pages) Vincotech – 3~rectifier,BRC,Inverter, NTC | |||
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V23990-P763-A-PM
Output Inverter
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
5000
4000
3000
2000
1000
0
0
20
40
At
Tj =
VCE =
VGE =
Rgon =
25/150 °C
300
V
±15
V
8
â¦
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
Output inverter FWD
dIrec/dt
dI0/dt
60
80 I C (A) 100
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
0
8
16
At
Tj =
VR =
IF =
VGE =
25/150 °C
300
V
50
A
±15
V
Output inverter FWD
dIrec/dt
dI0/dt
24
32
R Gon ( â¦) 40
Output inverter IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
Output inverter FWD
100
100
D = 0,5
0,2
10-1
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-5
10-4
10-3
10-2
10-1
100 t p (s)
10110
At
D=
tp / T
RthJH =
0,823
K/W
Single device heated
RthJH =
0,94
K/W
AlI devices heated
IGBT thermal model values
R (C/W)
0,02
0,08
0,19
0,38
0,09
0,06
Tau (s)
9,2E+00
1,2E+00
1,6E-01
3,7E-02
7,1E-03
5,8E-04
R (C/W)
0,14
0,08
0,19
0,38
0,09
0,06
10-1
10-2
10-5
10-4
10-3
10-2
10-1
At
D=
tp / T
RthJH =
1,12
K/W
Single device heated
RthJH =
1,12
AlI devices heated
FWD thermal model values
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
100
t p (s) 10110
K/W
R (C/W)
0,02
0,08
0,22
0,49
0,20
0,11
Tau (s)
9,2E+00
1,2E+00
1,3E-01
2,8E-02
5,9E-03
5,5E-04
R (C/W)
0,02
0,08
0,22
0,49
0,20
0,11
copyright Vincotech
10
Revision: 3
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