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| V23990-P760-A-D4-14 Datasheet, PDF (10/24 Pages) Vincotech – 3~rectifier,BRC,Inverter, NTC | |||
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Output Inverter
V23990-P760-A-PM
datasheet
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
8000
Output inverter FWD
7000
6000
5000
4000
3000
2000
1000
0
0
40
80
At
Tj =
VCE =
VGE =
Rgon =
255//115500 °C
600
V
±15
V
4
â¦
dI0/dt
dIrec/dt
120
160
I C (A) 200
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
Output inverter FWD
10000
dI0/dt
8000
dIrec/dt
6000
4000
2000
0
0
8
16
24
32 R Gon ( â¦) 40
At
Tj =
VR =
IF =
VGE =
255//115500 °C
600
V
100
A
±15
V
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
D = 0,5
10-1
0,2
10-1
D = 0,5
0,1
0,2
0,05
0,1
0,02
0,05
0,01
0,02
0,005
0,01
0,000
0,005
0,000
10-2
10-5
10-4
10-3
10-2
10-1
At
D=
tp / T
RthJH =
0,36
K/W
Single device heated
RthJH =
0,44
All devices heated
IGBT thermal model values
100
t p (s) 10110
K/W
R (K/W)
0,03
0,06
0,14
0,10
0,02
0,02
Tau (s)
5,4E+00
1,1E+00
1,4E-01
2,6E-02
1,7E-03
2,4E-04
R (K/W)
0,11
0,06
0,14
0,10
0,02
0,02
Tau (s)
5,36
1,05
0,14
0,03
0,00
0,00
10-2
10-5
10-4
10-3
10-2
10-1
100
t p (s) 10110
At
D=
tp / T
RthJH =
0,63
K/W
Single device heated
RthJH =
0,63
All devices heated
FWD thermal model values
K/W
R (K/W)
0,02
0,09
0,13
0,27
0,07
0,04
Tau (s)
9,9E+00
1,4E+00
2,3E-01
4,5E-02
1,1E-02
7,6E-04
R (K/W)
0,02
0,09
0,13
0,27
0,07
0,04
Tau (s)
9,88
1,39
0,23
0,04
0,01
0,00
copyright Vincotech
10
19 Dec 2014 / Revision: 4
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