80-M006PNB010SA-K615 Datasheet, PDF (10/17 Pages) Vincotech – Solderless interconnection

80-M006PNB010SA*-K615*
datasheet
Inverter Switch / Inverter Diode
Figure 25
Safe operating area as a function
of collector-emitter voltage
I _C = f(V _CE)
10²
10mS
100mS
DC
1mS
10¹
100uS
IGBT
10uS
10⁰
10^-1
10^-2
10⁰
10¹
10²
V CE (V)
10³
D=
T_h =
V _GE =
T_j =
single pulse
80
ºC
±15
V
T _jmax
ºC
Figure 27
Short circuit withstand time as a function of
gate-emitter voltage
t _sc = f(V _GE)
17,5
IGBT
15
12,5
10
7,5
5
2,5
0
12
14
16
V _CE =
600
V
T_j ≤
175
ºC
18
V GE (V)
20
Figure 26
Gate voltage vs Gate charge
V _GE = f(Q _G)
17,5
IGBT
15
120V
12,5
480V
10
7,5
5
2,5
0
0
10
20
30
40
50
60
70
80
Q G (nC)
I_C =
10
A
Figure 28
IGBT
Typical short circuit collector current as a function of
gate-emitter voltage
I _sc = f(V _GE)
250
200
150
100
50
0
12
14
16
V _CE ≤
600
V
T_j =
175
ºC
18
V GE (V)
20
copyright Vincotech
10
12 Jan. 2016 / Revision 3