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80-M006PNB006SA-K614_16 Datasheet, PDF (10/17 Pages) Vincotech – Solderless interconnection
80-M006PNB006SA*-K614*
datasheet
Inverter
Figure 25
Safe operating area as a function
of collector-emitter voltage
I C = f(V CE)
102
10mS
100mS
1mS
DC
101
100uS
100
10-1
IGBT
10uS
100
101
102
V CE (V)
103
D=
Ts =
V GE =
Tj =
single pulse
80
ºC
±15
V
T jmax
ºC
Figure 27
Short circuit withstand time as a function of
gate-emitter voltage
t sc = f(V GE)
171,57,5
IGBT
1515
121,52,5
1010
7,57,5
5
5
2,5
2,5
0
0 12
12
13 12,6 14
13
14
1153,2 16 13,817
15
16
17
1814,4
18
V11G99VEV(GVGE)E(V(V) )122500
V CE =
300
V
Tj ≤
175
ºC
Figure 26
Gate voltage vs Gate charge
V GE = f(Q G)
18
16
14
12
10
8
6
4
2
0
0
11
22
IC =
6
A
IGBT
120V
480V
33
44
55
Q G (nC)
Figure 28
IGBT
Typical short circuit collector current as a function of
gate-emitter voltage
I sc = f(V GE)
225150000
222255
220008000
117755
115506000
112255
110004000
7755
5502000
2255
00 0
112212 1133
114414
1155
116166
1177
111888
V11GE99V(VVGE)G(EV()V) 222000
V CE ≤
300
V
Tj =
175
ºC
copyright Vincotech
10
13 Jan. 2016 / Revision 3