80-M006PNB006SA-K614C Datasheet, PDF (10/17 Pages) Vincotech – Solderless interconnection

80-M006PNB006SA-K614C;80-M006PNB006SA01-K614D
preliminary datasheet
Output Inverter
Figure 25
Safe operating area as a function
of collector-emitter voltage
I_C = f(V_CE)
10³
Output inverter IGBT
10²
10¹
100uS
10uS
10mS
DC
100mS
1mS
10⁰
10^-1
10⁰
10¹
10²
V CE (V)
10³
D=
T_h =
V_GE =
T_j =
single pulse
80
ºC
±15
V
T_jmax
ºC
Figure 27
Short circuit withstand time as a function of
gate-emitter voltage
t_sc = f(V_GE)
171,75,5
Output inverter IGBT
1515
121,25,5
1010
7,75,5
55
2,5
2,5
0
0
12
13
14 13 15
16
17 14 18
19
2105
12
13
14
15
16
17
18
V G1E9V(^VVG)GEE(V^(V) ⁾ 20
V_CE =
300
V
T_j ≤
175
ºC
Figure 26
Gate voltage vs Gate charge
Output inverter IGBT
V_GE = f(Q_GE)
18
16
120V
14
12
480V
10
8
6
4
2
0
0
5
10
15
20
25
30
35
40
45
5_Q0_{g (nC)} 55
I_C =
6
A
Figure 28
Output inverter IGBT
Typical short circuit collector current as a function of
gate-emitter voltage
I_sc = f(V_GE)
221550000
222255
220080000
117755
115560000
112255
110040000
7755
5520000
2255
00 ₀
112212
113313
114144
115155
111666
111777
1188
1199_{V GVGEEG(EV()V) 2200}
V_CE ≤
300
V
T_j =
175
ºC
copyright Vincotech
10
Revision: 1