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10-FZ06NRA041FS03-P965F78 Datasheet, PDF (10/28 Pages) Vincotech – Neutral point clamped inverter
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10-FZ06NRA041FS03-P965F78
10-PZ06NRA041FS03-P965F78Y
Figure 17
Typical rate of fall of forward and reverse recovery current
as a function of collector current
dI0/dt,dIrec/dt = f(Ic)
20000
FWD
16000
dIrec/dtLow T
Figure 18
Typical rate of fall of forward and reverse recovery current
as a function of MOSFET turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
25000
FWD
20000
12000
8000
4000
dIrec/dtHigh T
di0/dtHigh T
dIo/dtLow T
15000
10000
5000
dI0/dtLow T
dIrec/dtLow T
dI0/dtHigh TdIrec/dtHigh T
0
0
10
20
30
40
50 I C (A) 60
0
0
2
4
6
At
Tj =
VCE =
VGE =
Rgon =
25/125 °C
350
V
10
V
2
Ω
At
Tj =
VR =
IF =
VGE =
25/125 °C
350
V
30
A
10
V
Figure 19
MOSFET transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
MOSFET
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
8
R gon (Ω) 10
FWD
100
100
D = 0,5
D = 0,5
10-1
0,2
0,1
10-1
0,2
0,1
0,05
0,05
0,02
0,02
0,01
0,01
0,005
0,005
0.000
0.000
10-2
10-2
10-5
10-4
10-3
10-2
10-1
100
t p (s)
1012
10-5
10-4
10-3
10-2
10-1
100
t p (s) 1012
At
At
D=
RthJH =
tp / T
0,90
K/W
IGBT thermal model values
D=
tp / T
RthJH =
1,74
K/W
FWD thermal model values
R (C/W) Tau (s)
R (C/W) Tau (s)
0,13
4,5E+00
0,09
3,4E+00
0,26
1,1E+00
0,23
5,1E-01
0,25
2,4E-01
0,85
1,0E-01
0,18
8,4E-02
0,33
2,5E-02
0,07
1,5E-02
0,13
4,5E-03
0,03
1,1E-03
0,11
8,6E-04
copyright Vincotech
10
Revision: 4