 English |
|
|
|
|
|
|
|
| 10-FZ062TA099FH-P980D18 Datasheet, PDF (10/20 Pages) Vincotech – Vincotech clip-in housing | |||
| |||
| ◁ |
10-FZ062TA099FH-P980D18/-FH01-P980D28
datasheet
PFC
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I c)
12000
PFC FWD
10000
8000
dIr/dt25
dIr/dt125
6000
4000
2000
dI0/dt25
dI0/dt125
Tj = Tjmax - 25°C
Tj = 25°C
0
0
5
10
15
20
25 I C (A) 30
Tj =
V CE =
V GE =
R gon =
25/125 °C
400
V
10
V
4
â¦
Figure 19
IGBT/MOSFET transient thermal impedance
as a function of pulse width
Z thJH = f(t p)
101
PFC MOSFET
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI 0/dt ,dI rec/dt = f(R gon)
16000
14000
dIrec/dt25
PFC FWD
12000
dIrec/dt125
10000
8000 dI0/dt25
Tj = Tjmax - 25°C
Tj = 25°C
6000
dI0/dt125
4000
2000
0
0
3
6
9
12
15 R g on ( â¦) 18
Tj =
VR =
IF =
V GS =
25/125 °C
400
V
15
A
10
V
Figure 20
FWD transient thermal impedance
as a function of pulse width
Z thJH = f(t p)
101
PFC FWD
100
100
10-1
10-2
10-5
10-4
10-3
10-2
D=
R thJH =
tp / T
1,13
K/W
IGBT thermal model values
R (K/W)
0,026
0,127
0,544
0,266
0,107
0,062
Tau (s)
8,47E+00
1,17E+00
1,77E-01
4,73E-02
7,23E-03
5,51E-04
D = 0,5
0,2
10-1
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-1
100 t p (s)
10110
10-5
10-4
10-3
10-2
D=
R thJH =
tp / T
2,56
K/W
FWD thermal model values
R (K/W)
0,12
0,49
1,11
0,49
0,30
0,05
Tau (s)
2,23E+00
2,82E-01
6,57E-02
1,17E-02
2,09E-03
2,12E-04
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
100
t p (s) 10110
copyright Vincotech
10
10 Febr. 2015 / Revision 4
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese