V23990-P829-F10-PM Datasheet, PDF (1/16 Pages) Vincotech – Compact and Low Inductance Design

flowPACK 1 3rd gen
Features
● Compact flow1 housing
● Trench Fieldstop IGBT4 Technology
● Compact and Low Inductance Design
● Built-in NTC
Target Applications
● Motor Drive
● Power Generation
● UPS
Types
● V23990-P829-F10
● V23990-P829-F108
V23990-P829-F10/ F108-PM
preliminary datasheet
1200V/50A
flow1 housing
17 mm housing
Schematic
12 mm housing
Tj=25°C, unless otherwise specified
Parameter
Inverter Transistor
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
Inverter Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
Thermal Properties
Storage temperature
Operation temperature under switching condition
Maximum Ratings
Symbol
Condition
V_CE
I_C
I_Cpulse
P_tot
V_GE
t_SC
V_CC
T_jmax
T_j=T_jmax
t_p limited by T_jmax
T_j=T_jmax
T_j≤150°C
V_GE=15V
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
V_RRM
I_F
I_FRM
P_tot
T_jmax
T_j=25°C
T_j=T_jmax
t_p limited by T_jmax
T_j=T_jmax
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
T_stg
T_op
copyright by Vincotech
1
Value
Unit
1200
V
45
A
150
A
103
W
±20
V
10
µs
800
V
175
°C
1200
V
44
A
100
A
76
W
175
°C
-40…+125
°C
-40…+150
°C
Revision: 3